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D S G D S G S SO 2 T- 27 APT50M60JN 500V 71A 0.06O "UL Recognized" File No. E145592 (S) ISOTOP(R) POWER MOS IV (R) MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor 1 SINGLE DIE ISOTOP(R) PACKAGE All Ratings: TC = 25C unless otherwise specified. APT 50M60JN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500 71 284 30 690 5.52 -55 to 150 300 and Inductive Current Clamped Volts Watts W/C C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 A) On State Drain Current 2 MIN APT50M60JN TYP MAX UNIT Volts 500 ID(ON) APT50M60JN 71 Amps (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 5.0mA) 2 RDS(ON) APT50M60JN 0.060 Ohms IDSS IGSS VGS(TH) 250 1000 100 2 4 A nA Volts THERMAL CHARACTERISTICS Symbol RJC RCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) MIN TYP MAX UNIT C/W 050-5038 Rev E 0.18 0.05 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT50M60JN Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT 11640 2230 800 475 68 246 22 30 66 13 14000 3120 1200 710 100 370 45 60 100 25 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage 1 MIN APT50M60JN TYP MAX UNIT 71 284 1.8 650 19 1300 38 Amps APT50M60JN 2 (VGS = 0V, IS = -ID [Cont.]) Volts ns C Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/s) PACKAGE CHARACTERISTICS Symbol LD LS VIsolation CIsolation Torque Characteristic / Test Conditions Internal Drain Inductance (Measured From Drain Terminal to Center of Die.) Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Drain-to-Mounting Base Capacitance (f = 1MHz) Maximum Torque for Device Mounting Screws and Electrical Terminations. MIN TYP MAX UNIT nH Volts 3 5 2500 70 13 pF in-lbs 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.2 , THERMAL IMPEDANCE (C/W) 0.1 0.05 D=0.5 0.2 0.1 0.01 0.005 0.05 Note: PDM 0.02 0.01 t1 t2 050-5038 Rev E Z 0.001 0.0005 10-5 SINGLE PULSE 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC JC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT50M60JN 200 VGS=8, 10 & 15V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 160 200 VGS=15V 10V 160 8V 120 6V 80 5.5V 40 4.5V 4V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 2.0 TJ = 25C 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE NORMALIZED TO V = 10V @ 0.5 I [Cont.] GS D 120 6V 80 5.5V 80 4.5V 4V 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 100 TJ = -55C TJ = +25C TJ = +125C 5V 5V ID, DRAIN CURRENT (AMPERES) 80 VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 1.5 VGS=10V 60 40 1.0 VGS=20V 20 TJ = +125C TJ = +25C TJ = -55C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 80 ID, DRAIN CURRENT (AMPERES) 0 0.5 0 50 100 150 200 250 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.1 60 1.0 40 0.9 20 0.8 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 I = 0.5 I [Cont.] D D 0 25 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 0.7 V GS = 10V 2.0 1.2 1.5 1.0 1.0 0.8 0.5 0.6 050-5038 Rev E 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 0.4 -50 APT50M60JN 500 10S ID, DRAIN CURRENT (AMPERES) 100 50 1mS 10 5 10mS 100mS DC TC =+25C TJ =+150C SINGLE PULSE OPERATION HERE LIMITED BY RDS (ON) 50,000 100S C, CAPACITANCE (pF) 10,000 5,000 Ciss Coss 1 .5 Crss 1,000 500 .1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I = I [Cont.] D D .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 400 TJ =+150C 100 50 TJ =+25C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 20 VDS=100V VDS=250V 16 12 VDS=400V 8 10 5 TJ =-55C 4 200 400 600 800 1000 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 1 APT Reserves the right to change, without notice, the specifications and information contained herein. SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) * Source Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. * Source 050-5038 Rev E Gate Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. |
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